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Single crystals of bismuth silicon oxide grown by the Czochralski technique and their characterisation

Single crystals of Bi12SiO20 were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. X-Ray measurements were performed on powdered samples to obtain the lattice parameters. The optical...

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Principais autores: ANDREJA VALCIC, RADOS GAJIC, STEVAN DJURIC, SLOBODANKA NIKOLIC, ALEKSANDAR GOLUBOVIC
Formato: Artigo
Idioma:Inglês
Publicado em: Serbian Chemical Society 1999-09-01
coleção:Journal of the Serbian Chemical Society
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Acesso em linha:http://www.shd.org.yu/HtDocs/SHD/Vol64/No9-Pdf/V64-no9-07.zip
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