Manufacturing technology for contacts to silicon carbide
The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal c...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Politehperiodika
2013-02-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Assuntos: | |
| Acceso en liña: | http://www.tkea.com.ua/tkea/2013/1_2013/pdf/05.zip |
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