Performance and Scalability of Strain Engineered 2D MoTe₂ Phase-Change Memristors

This work presents a performance optimization and scalability study of a two-dimensional vertical molybdenum ditelluride (MoTe2) phase-change memristor. The device switches between the semimetallic (1T’) and semiconducting (2H) states under an electric field. Process-induced strain engineerin...

Descrizione completa

Dettagli Bibliografici

Autori principali:	Maria Vitoria Guimaraes Leal, Ahmad Azizimanesh, Nazmul Hasan, Stephen M. Wu
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	IEEE 2025-01-01
Serie:	IEEE Journal of the Electron Devices Society
Soggetti:	Memristor two-dimensional materials strain engineering phase-change memory device fabrication
Accesso online:	https://ieeexplore.ieee.org/document/10945750/
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!