GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit

Abstract LED drivers of present day demand high power factor (PF), high power efficiency, low total harmonic distortion, very low electromagnetic interference and high reliability but still struggling with low operating frequency and voltage, low efficiency, large size, lack of fully soft switching,...

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Autors principals:	Muhammad Faizan, Zhengfang Qian, Hua Zhu, Shuting Fan, Muhammad Zain Yousaf, Mohit Bajaj, Chen Zhichu, Asad Aziz
Format:	Artigo
Idioma:	Inglês
Publicat:	Nature Portfolio 2025-04-01
Col·lecció:	Scientific Reports
Matèries:	Wide bandgap devices Mitigation of shoot-through and switching oscillations Fully soft switching GaN HEMTs LED driver Power efficiency
Accés en línia:	https://doi.org/10.1038/s41598-025-92341-w
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