Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies

For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V m...

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Bibliografski detalji

Glavni autori:	Ahid S. Hajo, Oktay Yilmazoglu, Armin Dadgar, Franko Kuppers, Thomas Kusserow
Format:	Artigo
Jezik:	Inglês
Izdano:	IEEE 2020-01-01
Serija:	IEEE Access
Teme:	Gallium nitride gunn diodes semiconductor structure terahertz source side-contact field-plate
Online pristup:	https://ieeexplore.ieee.org/document/9081902/
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