Temperature Dependent Switching Behavior of BFN Thin Films: a Wide Band Gap Semiconductor

The thin film of complex perovskite Ba(Fe0.5Nb0.5)O3 (BFN) was prepared through Pulsed Laser Deposition (PLD) technique. XRD and AFM studies show single cubic phase with well developed nano size grains of BFN compound. Swift Heavy Ion (SHI) irradiation on BFN of O+7 ions up to 1 × 1013 ions per cc f...

पूर्ण विवरण

ग्रंथसूची विवरण

मुख्य लेखकों:	Devang D. Shah, P.K. Mehta, M.S. Desai, C.J. Panchal
स्वरूप:	Artigo
भाषा:	Inglês
प्रकाशित:	Sumy State University 2011-01-01
श्रृंखला:	Журнал нано- та електронної фізики
विषय:	X-Ray Diffraction Atomic Force Microscopy PLD Thin Films Ion Irrediation Effects Wide Band Gap Semiconductor
ऑनलाइन पहुंच:	http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%202/articles/jnep_2011_V3_N1(Part2)_330-340.pdf
टैग:	टैग जोड़ें कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!