Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence

The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and...

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Detalhes bibliográficos

Principais autores:	Ahmad Echresh, Himani Arora, Florian Fuchs, Zichao Li, René Hübner, Slawomir Prucnal, Jörg Schuster, Peter Zahn, Manfred Helm, Shengqiang Zhou, Artur Erbe, Lars Rebohle, Yordan M. Georgiev
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2021-10-01
coleção:	Nanomaterials
Assuntos:	germanium nanowires Hall bar configuration Hall effect electrical characterization
Acesso em linha:	https://www.mdpi.com/2079-4991/11/11/2917
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