Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters
Silicon quadrant p-i-n photodiodes of different concentrations of diffused phosphorus in the n+- layer were fabricated. The experimental curve of phosphorus impurity distribution along the depth of the diffusion layer is obtained. The influence of charge carrier concentration in this layer on the da...
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Vasyl Stefanyk Carpathian National University
2022-12-01
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| Schriftenreihe: | Фізика і хімія твердого тіла |
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| Online-Zugang: | https://journals.pnu.edu.ua/index.php/pcss/article/view/5904 |
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