Configuration of the active region for the Ge-on-Si photodetector based on carrier mobility
The design of vertical and lateral PIN Ge-on-Si photodetectors was motivated by the disparity in electron and hole mobilities. In the case of vertical PIN junction detectors, configuring the slab region as n-type doping leads to a notable increase in the bandwidth of approximately 20 GHz compared to...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Frontiers Media S.A.
2023-06-01
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| coleção: | Frontiers in Physics |
| Assuntos: | |
| Acesso em linha: | https://www.frontiersin.org/articles/10.3389/fphy.2023.1150684/full |
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