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Interfacial Regulation of Dielectric Properties in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films

The discovery of ferroelectricity in hafnium zirconium oxide (HZO) thin films has attracted wide attention from academia to industry due to the application in ferroelectric non-volatile random access memories (FeRAM) with prominent performance in scalability and CMOS process compatibility. Dielectri...

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Principais autores: Minghao Shao, Tianqi Lu, Zhibo Wang, Houfang Liu, Ruiting Zhao, Xiao Liu, Xiaoyue Zhao, Renrong Liang, Yi Yang, Tian-Ling Ren
Formato: Artigo
Idioma:Inglês
Publicado em: IEEE 2021-01-01
Colecção:IEEE Journal of the Electron Devices Society
Assuntos:
Ferroelectrics
hafnium zirconium oxide
interface
dielectric spectrum
constant phase element
Acesso em linha:https://ieeexplore.ieee.org/document/9606217/
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