Voltage-assisted all-optical switching in magnetic tunnel junctions based on Tb/Co multilayers
This work investigates the influence of bias voltage on the optical switching behavior of a Tb/Co-based Magnetic Tunnel Junction (MTJ) in an 80-nm diameter pillar device. The experimental results demonstrate enhanced switching performance at high bias voltage, with a maximum switching probability ac...
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| Hauptverfasser: | , , , , , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
AIP Publishing LLC
2026-06-01
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| Schriftenreihe: | APL Materials |
| Online-Zugang: | https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0331782/21021690/061101_1_5.0331782.pdf |
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