A monolithic GaN driver with a deadtime generator (DTG) for high‐temperature (HT) GaN DC‐DC buck converters

Abstract This paper presents a monolithic GaN driver with a deadtime generator (DTG) for half‐bridge DC‐DC buck converters. The proposed GaN integrated circuits (ICs) were fabricated in a 3 µm enhancement‐mode GaN MIS‐HEMTs process. The integrated DTG converter can operate at 250°C with a large gate...

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Autors principals:	Miao Cui, Yuhao Zhu, Pingyu Cao, Ang Li, Qinglei Bu, Ivona Z. Mitrovic, Xujun Su, Yinchao Zhao, Huiqing Wen, Wen Liu, Cezhou Zhao
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley 2023-07-01
Col·lecció:	IET Power Electronics
Matèries:	DC‐DC power convertors MOS integrated circuits wide band gap semiconductors
Accés en línia:	https://doi.org/10.1049/pel2.12498
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