Rapid Melt Growth of Single Crystal InGaAs on Si Substrates
InGaAs integration on Si substrates is an important topic for next generation electronic devices. Rapid melt growth (RMG) has the potential to grow defect-free lattice mismatched materials on Si at low cost. Most previous publications have focused on growing binary III–V compounds by RMG, but none h...
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| Autori principali: | , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Wiley
2016-01-01
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| Serie: | Advances in Materials Science and Engineering |
| Accesso online: | http://dx.doi.org/10.1155/2016/7139085 |
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