Design of isolated IGBT driving and control circuits for an interleaved boost converter
An IGBT/MOSFET driver circuit works at a low voltage, between 5-15 V of its gate voltage to drive power converter switching devices that work at higher voltages. If there is no isolation between the driver and power converter circuits, any damage that may occur to the power converter circuit at high...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Khon Kaen University
2021-01-01
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| coleção: | Engineering and Applied Science Research |
| Assuntos: | |
| Acesso em linha: | https://ph01.tci-thaijo.org/index.php/easr/article/download/226487/165851/ |
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