Photosensitive Characteristics of Ga₂O₃/p-Si Schottky Barrier Solar-Blind Photodetector

In this work, a Ga₂O₃/p-Si MOS-type Schottky barrier photodetector was successfully fabricated and characterized for solar-blind ultraviolet detection. The electrical and optoelectronic characterizations of the devices were performed under dark and 254 nm illumination. T...

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Váldodahkkit:	Chia-Hsun Chen, Shu-Bai Liu, Ting-Chun Wang
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	IEEE 2025-01-01
Ráidu:	IEEE Photonics Journal
Fáttát:	Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2</sub>O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3</sub> solar-blind photodetectors Schottky barrier ideality factor series resistance Cheung’s method
Liŋkkat:	https://ieeexplore.ieee.org/document/11154127/
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