Distribution of excess charge carriers in bilateral macroporous silicon with the same thickness of porous layers
In this work, to calculate the distribution of the excess minority carrier concentration in bilateral macroporous silicon, the solution of the diffusion equation for stationary conditions is used, which is written for a monocrystalline substrate and macroporous layers. The solution to the diffusion...
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Vasyl Stefanyk Carpathian National University
2022-03-01
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| Schriftenreihe: | Фізика і хімія твердого тіла |
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| Online-Zugang: | https://journals.pnu.edu.ua/index.php/pcss/article/view/5367 |
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