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Morphology Analysis of Si Island Arrays on Si(001)

<p>Abstract</p> <p>The formation of nanometer-scale islands is an important issue for bottom-up-based schemes in novel electronic, optoelectronic and magnetoelectronic devices technology. In this work, we present a detailed atomic force microscopy analysis of Si island arrays grown by molecular beam...

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Autori principali: Gonz&#225;lez-Gonz&#225;lez A, Alonso M, Navarro E, Saced&#243;n JL, Ruiz A
Natura: Artigo
Lingua:Inglês
Pubblicazione: SpringerOpen 2010-01-01
Serie:Nanoscale Research Letters
Soggetti:
Silicon nanostructures
Molecular beam epitaxy
Self-assembly
Scanning probe microscopy
Morphology analysis
Accesso online:http://dx.doi.org/10.1007/s11671-010-9725-8
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