Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels

In this paper we present a novel, quadruple well process developed in a modern 0.18 mm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents...

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Detaylı Bibliyografya
Asıl Yazarlar:	John Allan Wilson, Nigel Keith Watson, Enrico Giulio Villani, Mike Tyndel, Renato Turchetta, Konstantin Stefanov, Marcel Stanitzki, Vladimir Rajovic, Matthew Noy, Owen Daniel Miller, Yoshiari Mikami, Anne-Marie Magnan, Paul Dominic Dauncey, Jamie Phillip Crooks, Jamie Alexander Ballin
Materyal Türü:	Artigo
Dil:	Inglês
Baskı/Yayın Bilgisi:	MDPI AG 2008-09-01
Seri Bilgileri:	Sensors
Konular:	CMOS image sensor fill factor
Online Erişim:	http://www.mdpi.com/1424-8220/8/9/5336/
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Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels

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