Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications. In this study, GaN films are grown using a plasma-enhanced atomic layer deposition (PEALD) with trimethylgallium (TMG)...

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Detalhes bibliográficos

Principais autores:	Fang-Bin Ren, Shi-Cong Jiang, Chia-Hsun Hsu, Xiao-Ying Zhang, Peng Gao, Wan-Yu Wu, Yi-Jui Chiu, Shui-Yang Lien, Wen-Zhang Zhu
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2022-11-01
coleção:	Molecules
Assuntos:	gallium nitride plasma-enhanced atomic layer deposition substrate temperature
Acesso em linha:	https://www.mdpi.com/1420-3049/27/23/8123
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