Structural properties of Bi thin film grown on Si (111) by quasi-van der Waals epitaxy
Abstract Crystallinity of an 80-nm-thick bismuth thin film grown on Si (111) substrate by MBE was investigated. The highly (0003) textured Bi film contains two twinning domains with different bilayer stacking sequences. The basic lattice parameters c and a as well as b, the bilayer thickness, of the...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Portfolio
2022-02-01
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| coleção: | Scientific Reports |
| Acesso em linha: | https://doi.org/10.1038/s41598-022-06472-5 |
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