Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems

A ferroelectric thin‐film transistor (FeTFT)‐based synaptic device with an indium–gallium–zinc oxide (IGZO) channel and a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structure is reported. The fabricated FeTFT exhibits a highly linear conductance response (|α| = 0.21) with a large dyna...

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Bibliografski detalji

Glavni autori:	Dongseok Kwon, Eun Chan Park, Wonjun Shin, Ryun-Han Koo, Joon Hwang, Jong-Ho Bae, Daewoong Kwon, Jong-Ho Lee
Format:	Artigo
Jezik:	Inglês
Izdano:	Wiley 2023-12-01
Serija:	Advanced Intelligent Systems
Teme:	ferroelectric ferroelectric thin-film transistors indium–gallium–zinc oxide metal–ferroelectric–metal–insulator–semiconductor neuromorphic systems synapses
Online pristup:	https://doi.org/10.1002/aisy.202300125
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