Beyond the Edge: Basal‐Plane Defects as the Dominant Catalytic Sites in Sulfur‐Doped Graphene

ABSTRACT Sulfur‐doped graphene (SG) has attracted considerable interest for energy conversion and storage applications. However, the relevant catalytic mechanisms remain obscure due to ongoing contentious debates regarding the location of dopant atoms. While theoretical studies often assume sulfur d...

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Autors principals:	Xuanhao Yuan, Chenhui Wang, Hui Hu, Hao Cui, Yan Li, Chengxin Wang
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley 2026-05-01
Col·lecció:	Advanced Science
Matèries:	defects in basal plane density functional theory calculations electrochemical reactions inevitable oxygen‐bearing defects sulfur‐doped graphene
Accés en línia:	https://doi.org/10.1002/advs.202521758
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