74.7% Efficient GaAs-Based Laser Power Converters at 808 nm at 150 K
High-efficiency multijunction laser power converters are demonstrated for low temperature applications with an optical input at 808 nm. The photovoltaic power converting III-V semiconductor devices are designed with GaAs absorbing layers, here with 5 thin subcells (PT5), connected by transparent tun...
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| Principais autores: | , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI AG
2022-08-01
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| Serier: | Photonics |
| Fag: | |
| Online adgang: | https://www.mdpi.com/2304-6732/9/8/579 |
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