Enabling room-temperature ferromagnetism and p-type conductance in MoS2 monolayers by substitutional doping of vanadium

The integrated circuits based on carrier charge have neared their physical limits, which are constrained by the von Neumann architecture and incapable of meeting the demands for information storage, processing, and transmission from the rapid advancements in mass data and artificial intelligence. Re...

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Hlavní autoři:	You Li, Yi Wan, Yuhai Lin, Ting Hu, Mingyan Liu, Yibin Zhao, Yunwei Yang, Changting Wei, Fang Li, Chengxi Huang, Fang Wu, Xiaoming Li, Xiufeng Song, Erjun Kan
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Tsinghua University Press 2025-01-01
Edice:	Nano Research
Témata:	molybdenum disulfide vanadium substitutional doping room-temperature ferromagnetism p-type semiconductor
On-line přístup:	https://www.sciopen.com/article/10.26599/NR.2025.94906996
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