Negative resistance, capacitance in Mn/SiO2/p-Si MOS structure
In this work is that we have manufactured a new structure that had not been studied by researchers before. This structure is Mn/SiO _2 /Si was synthesised by liquid phase epitaxy (LPE) as a metal-oxide- semiconductor (MOS) and can be used as a tunneling diode; demonstrated from I–V measurement and n...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
IOP Publishing
2020-01-01
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| Edice: | Materials Research Express |
| Témata: | |
| On-line přístup: | https://doi.org/10.1088/2053-1591/aba818 |
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