Compliance-free, analog RRAM devices based on SnOx
Abstract Brain-inspired resistive random-access memory (RRAM) technology is anticipated to outperform conventional flash memory technology due to its performance, high aerial density, low power consumption, and cost. For RRAM devices, metal oxides are exceedingly investigated as resistive switching...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Portfolio
2024-06-01
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| Series: | Scientific Reports |
| Acceso en liña: | https://doi.org/10.1038/s41598-024-64662-9 |
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