Silicon p-i-n Mesa-Photodiode Technology
The paper proposes the technology of silicon p-i-n mesa-photodiodes, which allows to exclude one high-temperature operation from the technological route. Reducing the number of thermal operations reduces the degree of degradation of the electro-physical characteristics of silicon during heat treatme...
Tallennettuna:
| Päätekijät: | , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
V.N. Karazin Kharkiv National University Publishing
2024-09-01
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| Sarja: | East European Journal of Physics |
| Aiheet: | |
| Linkit: | https://periodicals.karazin.ua/eejp/article/view/23784 |
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