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Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory

ABSTRACT The growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and model integrity. We present a model‐inversion‐resistant physical unclonable neural network (PUNN) implemented on commercial vertical NAND (V‐NAND) flash memo...

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Principais autores: Sung‐Ho Park, Ryun‐Han Koo, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee
Format: Artigo
Jezik:Inglês
Izdano: Wiley 2026-05-01
Serija:Advanced Science
Teme:
Online dostop:https://doi.org/10.1002/advs.74517
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