Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy
The effect of various planes was studied when growing epitaxial layers by liquid-phase epitaxy (LPE) on the profiled InP substrates. The studies allowed obtaining buried heterostructures in the InP/InGaAsP system and creating highly efficient laser diodes and image sensors. It was found that protru...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Voronezh State University
2021-06-01
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| coleção: | Конденсированные среды и межфазные границы |
| Assuntos: | |
| Acesso em linha: | https://journals.vsu.ru/kcmf/article/view/3430 |
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