Investigation of Nanocutting Characteristics of Off-Axis 4H-SiC Substrate by Molecular Dynamics
Silicon carbide (SiC), especially 4H-SiC, is an ideal semiconductor in power electronics due to its outstanding electrical and thermal properties. It has high hardness and brittleness, which makes it difficult to machine. To understand the nanomachining characteristics of off-axis 4H-SiC and provide...
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| Autori principali: | , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
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MDPI AG
2018-11-01
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| Serie: | Applied Sciences |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2076-3417/8/12/2380 |
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