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Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer

In this letter, novel heterostructure p-i-n GaN avalanche photodiodes (APDs) with p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N layer are proposed and analyzed through Silvaco Atlas simulations. The introduction of the In<sub>0.05</sub>Ga<sub>0.95</sub>N layer generates a negative polarization charge a...

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Príomhchruthaitheoirí: Haiping Wang, Haifan You, Danfeng Pan, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Formáid: Artigo
Teanga:Inglês
Foilsithe / Cruthaithe: IEEE 2020-01-01
Sraith:IEEE Photonics Journal
Ábhair:
GaN
avalanche photodiodes
p-type In<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{0.05}$</tex-math> </inline-formula>Ga<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{0.95}$</tex-math> </inline-formula>N
polarization
hole concentration
Silvaco
Rochtain ar líne:https://ieeexplore.ieee.org/document/8972413/
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