Experimental Demonstration of Capacitive in‐Memory Computing Using Ferroelectric HZO Memcapacitors

Abstract Ferroelectric capacitors (Fe‐Caps) exhibiting memcapacitive behavior are emerging as a compelling platform for low‐power capacitive in‐memory computing (IMC). Their inherently open‐circuit nature suppresses static current and sneak paths, offering a distinct advantage over resistive IMC cou...

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Autores principales:	Minjong Lee, Heber Hernandez‐Arriaga, Dushyant M. Narayan, Soham Shirodkar, Yong Chan Jung, Dan N. Le, Seongbin Park, Jongmug Kang, Seungbin Lee, Hyeonhong Min, Gwanghyeon Jang, Si Joon Kim, Jiyoung Kim
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Wiley-VCH 2025-12-01
Colección:	Advanced Electronic Materials
Materias:	experimental pattern recognition ferroelectric HZO in‐memory computing low‐power memcapacitive system
Acceso en línea:	https://doi.org/10.1002/aelm.202500588
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