Reducing Afterpulsing in InGaAs(P) Single-Photon Detectors with Hybrid Quenching
High detection efficiency appears to be associated with a high afterpulse probability for InP-based single-photon avalanche diodes. In this paper, we present a new hybrid quenching technique that combines the advantages of both fast active quenching and high-frequency gated-passive quenching, with t...
Tallennettuna:
| Päätekijät: | , , , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI AG
2020-08-01
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| Sarja: | Sensors |
| Aiheet: | |
| Linkit: | https://www.mdpi.com/1424-8220/20/16/4384 |
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