Micromagnetic modeling of domain wall motion in sub-100-nm-wide wires with individual and periodic edge defects
Reducing the switching energy of devices that rely on magnetic domain wall motion requires scaling the devices to widths well below 100 nm, where the nanowire line edge roughness (LER) is an inherent source of domain wall pinning. We investigate the effects of periodic and isolated rectangular notch...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
AIP Publishing LLC
2015-12-01
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| Col·lecció: | AIP Advances |
| Accés en línia: | http://dx.doi.org/10.1063/1.4937557 |
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