Li‐Ion‐Based Electrolyte‐Gated Transistors with Short Write‐Read Delay for Neuromorphic Computing

Abstract The hardware implementation of artificial neural networks requires synaptic devices with linear and high‐speed weight modulation. Memristors as a candidate suffer from excessive write variation and asymmetric resistance modulation that inherently rooted in their stochastic mechanisms. Thank...

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Principais autores:	Han Xu, Renrui Fang, Shuyu Wu, Junjie An, Woyu Zhang, Chao Li, Jikai Lu, Yue Li, Xiaoxin Xu, Yan Wang, Qi Liu, Dashan Shang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2023-02-01
coleção:	Advanced Electronic Materials
Assuntos:	artificial synapses electrolyte‐gated transistors electrolyte/gate interface write‐read delay
Acesso em linha:	https://doi.org/10.1002/aelm.202200915
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