Materials, processes, devices and applications of magnetoresistive random access memory

Magnetoresistive random access memory (MRAM) is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution, particularly in cache functions within circuits. Although MRAM has achieved mass production, its manufacturing process stil...

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Autors principals:	Meiyin Yang, Yan Cui, Jingsheng Chen, Jun Luo
Format:	Artigo
Idioma:	Inglês
Publicat:	IOP Publishing 2024-01-01
Col·lecció:	International Journal of Extreme Manufacturing
Matèries:	spin transfer torque-magnetoresistive random access memory (STT-MRAM) spin-orbit torque (SOT) MRAM materials for MRAM field-free writing of SOT-MRAM MRAM process artificial intelligence
Accés en línia:	https://doi.org/10.1088/2631-7990/ad87cb
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