Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
The effect of high energy radiation on the energy gap of compound semiconductor Silicon Carbide (SiC) are viewed. Emphasis is placed on those effects which can be interpreted in terms of energy levels. The goal is to develop semiconductors operating at high temperature with low energy gaps by induce...
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
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University of Baghdad, College of Science for Women
2009-09-01
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| Saila: | مجلة بغداد للعلوم |
| Gaiak: | |
| Sarrera elektronikoa: | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/1018 |
| Etiketak: |
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