Electrical and photoelectric properties of photocell on base of Schottky barrier contact Au-n-GaAs

Structure and strategy of the fabrication of the photocell on the base of the Schottky barrier contact Au-n-GaAs are сonsidered. There are measured I(V)-features of photocells, their C-V-features, spectrums photovoltage and current of the short circuit, and determined height of the Schottky barr...

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Prif Awduron:	A. I. Blesman, R. B. Burlakov
Fformat:	Artigo
Iaith:	Inglês
Cyhoeddwyd:	Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education 2019-10-01
Cyfres:	Омский научный вестник
Pynciau:	method of fabricating the photocell n-type gallium arsenide schottky barrier contacts
Mynediad Ar-lein:	https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/4%20(166)/55-60%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf
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