Investigation of Re-Program Scheme in Charge Trap-Based 3D NAND Flash Memory

Early retention or initial threshold voltage shift (IVS) is one of the key reliability challenges in charge trapping memory (CTM) based 3D NAND flash. Re-program scheme was introduced in quad-level-cell (QLC) NAND (Shibata <italic>et al.</italic>, 2007, Lee <italic>et al.</italic>, 2018, Shibata <it...

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Главные авторы:	Ting Cheng, Jianquan Jia, Lei Jin, Xinlei Jia, Shiyu Xia, Jianwei Lu, Kaiwei Li, Zhe Luo, Da Li, Hongtao Liu, Qiguang Wang, An Zhang, Daohong Yang, Zongliang Huo
Формат:	Artigo
Язык:	Inglês
Опубликовано:	IEEE 2021-01-01
Серии:	IEEE Journal of the Electron Devices Society
Предметы:	3D NAND flash QLC re-program IVS LM
Online-ссылка:	https://ieeexplore.ieee.org/document/9434406/
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