Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors
Extensive research has been conducted on wide-bandgap semiconductor diamond for the advancement of high-power, high-frequency, and high-temperature electronic devices. The author has established long-term collaboration with Prof. Koide, focusing on producing p-type hydrogen-terminated diamond (H-dia...
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| Hlavní autor: | |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Taylor & Francis Group
2025-12-01
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| Edice: | Functional Diamond |
| Témata: | |
| On-line přístup: | http://dx.doi.org/10.1080/26941112.2025.2551496 |
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