Cryogenic temperature operation of NiO/Ga2O3 heterojunction and Ni/Au Schottky rectifiers

Vertical geometry NiO/Ga2O3 heterojunction (HJ) rectifiers and Ni/Au Schottky rectifiers fabricated on the same wafer and each with the same diameter (100 μm) were operated at 77–473 K to compare their capabilities in space-like environments. The HJ rectifiers suffer a 4-order reduction in forward c...

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Autors principals:	Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Madani Labed, Jang Hyeok Park, You Seung Rim, Fan Ren, Stephen J. Pearton
Format:	Artigo
Idioma:	Inglês
Publicat:	AIP Publishing LLC 2024-10-01
Col·lecció:	AIP Advances
Accés en línia:	http://dx.doi.org/10.1063/5.0233627
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