All-Inorganic Red-Light Emitting Diodes Based on Silicon Quantum Dots
We report herein an all-inorganic quantum dot light emitting diode (QLED) where an optically active layer of crystalline silicon (Si) is mounted. The prototype Si-QLED has an inverted device architecture of ITO/ZnO/QD/WO<sub>3</sub>/Al multilayer, which was prepared by a facile solution process. The...
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| Главные авторы: | , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
MDPI AG
2019-07-01
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| Серии: | Crystals |
| Предметы: | |
| Online-ссылка: | https://www.mdpi.com/2073-4352/9/8/385 |
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