Properties of epitaxial, (001)- and (110)-oriented (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 films on silicon described by polarization rotation

Epitaxial (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 (PMN-PT) films with different out-of-plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and symmetric SrRuO3 electrodes on silicon substrates by pulsed laser deposition. The orientation of the SrRuO3 bottom electrode, either...

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Detalhes bibliográficos

Principais autores:	Muhammad Boota, Evert P. Houwman, Matthijn Dekkers, Minh D. Nguyen, Kurt H. Vergeer, Giulia Lanzara, Gertjan Koster, Guus Rijnders
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Taylor & Francis Group 2016-01-01
coleção:	Science and Technology of Advanced Materials
Assuntos:	pmn-pt pulsed laser deposition orientation control ferroelectricity piezoelectricity thin film epitaxy
Acesso em linha:	http://dx.doi.org/10.1080/14686996.2016.1140306
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