Electronic properties of ZrO2 films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Being an important semiconductor material for high power applications, silicon carbide (SiC) faces the problems while used as a gate oxygen layer in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work to replace the conventional SiO _2 with a high-k ma...

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Bibliografische Detailangaben

Hauptverfasser:	Xi-Rui Wang, Yu-Xuan Zeng, Jie Zhang, Wei Huang, Hong-Ping Ma, Qing-Chun Zhang
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	IOP Publishing 2024-01-01
Schriftenreihe:	Materials Research Express
Schlagworte:	high-k dielectric atomic layer deposition (ALD) x-ray photospectroscopy (XPS)
Online-Zugang:	https://doi.org/10.1088/2053-1591/ad1e0a
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