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Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates

In this work, low-threshold resonant lasing emission was investigated in undoped and Mg-doped GaN thin films on interfacial designed sapphire substrates. The scattering cross-section of the periodic resonant structure was evaluated by using the finite difference time domain (FDTD) method and was fou...

Täydet tiedot

Tallennettuna:
Päätekijät: Long Xu, Yuehan Cao, Tianwei Song, Caixia Xu
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI AG 2022-09-01
Sarja:Nanomaterials
Aiheet:
gallium nitride
lasing action
resonant structure
patterned sapphire substrate
Linkit:https://www.mdpi.com/2079-4991/12/18/3238
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