Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams

In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	Zhanymgul Koishybayeva, Fedor Konusov, Sergey Pavlov, Dmitrii Sidelev, Artur Nassyrbayev, Ruslan Gadyrov, Vladislav Tarbokov, Elena Polisadova, Abdirash Akilbekov
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Elsevier 2025-02-01
Schriftenreihe:	Optical Materials: X
Schlagworte:	Gallium oxide Thin films Magnetron sputtering Pulsed ion irradiation Photoconductivity Optical properties
Online-Zugang:	http://www.sciencedirect.com/science/article/pii/S2590147825000014
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