Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching
Abstract Proposals for new architectures that shorten the length of the transistor channel without the need for high‐end techniques are the focus of very recent breakthrough research. Although vertical and electrolyte‐gate transistors are previously developed separately, recent advances have introdu...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley-VCH
2024-06-01
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| coleção: | Advanced Electronic Materials |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1002/aelm.202300562 |
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