A One-Dimensional Effective Model for Nanotransistors in Landauer–Büttiker Formalism
In a series of publications, we developed a compact model for nanotransistors in which quantum transport in a variety of industrial nano-FETs was described quantitatively. The compact nanotransistor model allows for the extraction of important device parameters as the effective height of the source-...
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2020-03-01
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| Col·lecció: | Micromachines |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2072-666X/11/4/359 |
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