3D reconstruction and etching profile simulation for wiggling active area effect in dynamic random access memory manufacturing

Abstract Dynamic Random Access Memory (DRAM), a critical component in modern computing systems, relies heavily on the structural integrity of its active area (AA) - a fin-shaped transistor region responsible for charge transfer in memory cells. During advanced DRAM fabrication, the plasma etching pr...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Ziyi Hu, Jing Wen, Chaoran Yang, Hua Shao, Yuxuan Zhai, Rui Ge, Xiaobin He, Zongzheng Men, Yi Yang, Dianming Sun, Zhongming Liu, Dashan Shang, Zhiqiang Li, Junjie Li, Lado Filipovic, Rui Chen, Ling Li
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Nature Portfolio 2026-02-01
Sarja:	Communications Engineering
Linkit:	https://doi.org/10.1038/s44172-026-00626-3
Tagit:	Lisää tagi Ei tageja, Lisää ensimmäinen tagi!