Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers
It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In ad...
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| Hauptverfasser: | , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI AG
2024-11-01
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| Schriftenreihe: | Photonics |
| Schlagworte: | |
| Online-Zugang: | https://www.mdpi.com/2304-6732/11/11/1037 |
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